tm november 2007 ?2007 fairchild semiconductor corporation FDMS8672AS rev.b2 www.fairchildsemi.com 1 FDMS8672AS n-channel powertrench ? syncfet tm FDMS8672AS n-channel powertrench ? syncfet tm 30v, 28a, 5.0m ? features ? max r ds(on) = 5.0m ? at v gs = 10v, i d = 18a ? max r ds(on) = 7.0m ? at v gs = 4.5v, i d = 15a ? advanced package and silicon combination for low r ds(on) and high efficiency ? syncfet schottky body diode ? msl1 robust package design ? rohs compliant general description the FDMS8672AS has been designed to minimize losses in power conversion application. advancements in both silicon and package technologies have been combined to offer the lowest r ds(on) while maintaining excellent sw itching performance. this device has the added benefit of an efficient monolithic schottky body diode. applications ? synchronous rectifier for dc/dc converters ? notebook vcore/ gpu low side switch ? networking point of load low side switch ? telecom secondary side rectification mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage 20 v i d drain current -continuous (package limited) t c = 25c 28 a -continuous (silicon limited) t c = 25c 99 -continuous t a = 25c (note 1a) 18 -pulsed 200 e as single pulse avalanche energy (note 2) 253 mj p d power dissipation t c = 25c 70 w power dissipation t a = 25c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 1.8 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDMS8672AS FDMS8672AS power 56 13?? 12mm 3000units 4 3 2 1 5 6 7 8 g s s s pin 1 power 56 (bottom view) d d d d d d d d g s s s
FDMS8672AS n-channel powertrench ? syncfet tm www.fairchildsemi.com 2 ?2007 fairchild semiconductor corporation FDMS8672AS rev.b2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 1ma, v gs = 0v 30 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 10ma, referenced to 25 c 27 mv/ c i dss zero gate voltage drain current v ds = 24v, v gs = 0v 500 p a i gss gate to source leakage current v gs = 20v, v ds = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 1ma 1.0 1.9 3.0 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 10ma, referenced to 25 c -5 mv/ c r ds(on) static drain to source on resistance v gs = 10v, i d = 18a 4.0 5.0 m : v gs = 4.5v, i d = 15a 5.4 7.0 v gs = 10v, i d = 18a, t j = 125 c 5.6 7.6 g fs forward transconductance v dd = 10v, i d = 18a 85 s dynamic characteristics c iss input capacitance v ds = 15v, v gs = 0v, f = 1mhz 1955 2600 pf c oss output capacitance 1040 1385 pf c rss reverse transfer capacitance 125 190 pf r g gate resistance f = 1mhz 0.8 : switching characteristics t d(on) turn-on delay time v dd = 15v, i d = 18a, v gs = 10v, r gen = 6 : 12 22 ns t r rise time 4 10 ns t d(off) turn-off delay time 27 44 ns t f fall time 3 10 ns q g total gate charge v gs = 0v to 10v v dd = 15v, i d = 18a 28 40 nc q g total gate charge v gs = 0v to 4.5v 15 21 nc q gs gate to source charge 5.6 nc q gd gate to drain ?miller? charge 3.4 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0v, i s =2a (note 3) 0.4 0.7 v t rr reverse recovery time i f = 18a, di/dt = 300a/ p s 32 52 ns q rr reverse recovery charge 36 58 nc notes: 1. r t ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ca is determined by the user's board design. 2. starting t j = 25, l = 3mh, i as = 13a, v dd = 30v, v gs = 10v. 3. pulse test: pulse width < 30 0 p s, duty cycle < 2.0%. a. 50c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 125c/w when mounted on a minimum pad of 2 oz copper.
FDMS8672AS n-channel powertrench ? syncfet tm www.fairchildsemi.com 3 ?2007 fairchild semiconductor corporation FDMS8672AS rev.b2 typical characteristics t j = 25c unless otherwise noted figure 1. 01234 0 40 80 120 160 200 v gs = 4v v gs = 10v v gs = 4.5v pulse duration = 80 p s duty cycle = 0.5%max v gs = 3.5v v gs = 5v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0 40 80 120 160 200 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 4v v gs = 3.5v pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance i d , drain current(a) v gs = 4.5v v gs = 5v v gs = 10v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i d = 18a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 246810 0 4 8 12 16 pulse duration = 80 p s duty cycle = 0.5%max t j = 125 o c t j = 25 o c i d = 18a r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage ( v ) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 12345 0 35 70 105 140 175 v ds = 5v pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 125 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMS8672AS n-channel powertrench ? syncfet tm www.fairchildsemi.com 4 ?2007 fairchild semiconductor corporation FDMS8672AS rev.b2 figure 7. 0 5 10 15 20 25 30 0 2 4 6 8 10 i d = 18a v dd = 15v v dd = 10v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 20v gate charge characteristics figure 8. 0.1 1 10 100 1000 30 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 5000 50 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1 10 t j = 25 o c t j = 125 o c t av , time in avalanche(ms) i as , avalanche current(a) 30 500 u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 20 40 60 80 100 r t jc = 1.8 o c/w v gs = 10v v gs = 4.5v i d , drain current (a) t c , case temperature ( o c ) limited by package m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 100 p s dc 10s 1s 100ms 10ms 1ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c 300 figure 12. 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 single pulse r t ja = 125 o c/w t a = 25 o c 0.5 v gs = 10v p ( pk ) , peak transient power (w) t, pulse width (s) 500 s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25c unless otherwise noted
FDMS8672AS n-channel powertrench ? syncfet tm www.fairchildsemi.com 5 ?2007 fairchild semiconductor corporation FDMS8672AS rev.b2 figure 13. transient thermal response curve 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.001 0.01 0.1 1 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25c unless otherwise noted
FDMS8672AS n-channel powertrench ? syncfet tm www.fairchildsemi.com 6 ?2007 fairchild semiconductor corporation FDMS8672AS rev.b2 syncfet schottky body diode characteristics fairchild?s syncfet process embed s a schottky diode in parallel with powertrench mosfet. this diode exhibits similar characteristics to a discrete ex ternal schottky diode in parallel with a mosfet. figure 14 shows the reverse recovery characteristic of the FDMS8672AS. schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. this will increase the power in the device. 0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 t j = 125 o c t j = 100 o c t j = 25 o c i dss , reverse leakage current (ma) v ds , reverse voltage (v) typical characteristics (continued) figure 14. FDMS8672AS syncfet body diode reverse recovery characteristics figure 15. syncfet body diode reverse leakage vs drain to source voltage -30 -15 0 15 30 45 -4 -3 -2 -1 0 1 2 3 4 5 current (a) time (ns)
FDMS8672AS n-channel powertrench ? syncfet tm www.fairchildsemi.com 7 ?2007 fairchild semiconductor corporation FDMS8672AS rev.b2
www.fairchildsemi.com FDMS8672AS n-channel powertrench ? syncfet tm ?2007 fairchild semiconductor corporation FDMS8672AS rev.b2 tm trademarks the following are registered and unregister ed trademarks and service marks fairchild se miconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make ch anges without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit d escribed herein; neither does it convey any license under its patent rights, nor the rights of others . these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif ically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express writ ten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or sy stems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordanc e with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resource sm green fps? green fps? e-series? gto? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motion-spm? optologic ? optoplanar ? ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? ? datasheet identification product status definition advance information formative or in design this datasheet contains the desi gn specifications for product development. specifications may c hange in any manner without notice. preliminary first production this datasheet contains preliminary data; supplementary data will be pub- lished at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains final specificat ions. fairchild semi conductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains s pecifications on a product that has been discontin- ued by fairchild semiconductor. the datasheet is printed for reference infor- mation only. rev. i31
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